| Place of Origin |
Hunan China (Mainland) |
Product Name:Silicon wafer Growth Method:CZDiameter(mm):50.8---200Dia.& tolerance(mm): X±0.2Type/Dopant:P-Type/BoronN-Type/Phosphorus/Arsenic/AntimonyOrientation:<100> / <111>Resistivity(Ω.cm): 0.001---80RRG(%): P-Type<15% N-Type<25%Oxygen content (at cm-3 ): ≤1×1017Carbon content (at cm-3 ): ≤5×1016Thickness & tolerance (um): According to the customer